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dmc4028ssd document number: d35041 rev: 2 - 2 1 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd 40v complementary dual enhancement mode mosfet product summary device v (br)dss r ds(on) max i d t a = +25 ? c q1 40v 28m ? @ v gs = 10v 7.2a 49m ? @ v gs = 4.5v 5.4a q2 -40v 50m ? @ v gs = -10v -5.2a 79m ? @ v gs = -4.5v -4.7a description this mosfet has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor control ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram below ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 4) part number compliance case packaging DMC4028SSD-13 standard so-8 2500 / tape & reel dmc4028ssdq-13 automotive so-8 2500 / tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http?//www.diodes.com /products/packages.html . marking information top view so-8 equivalent circuit d2 s2 g2 d1 q1 n-channel q2 p-channel s1 g 1 d1 s1 g1 s2 g2 top view d1 d2 d2 top view = manufacturer?s marking c4028sd = product type marking code for DMC4028SSD-13 c4028dq = product type marking code for dmc4028ssdq-13 yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01 - 53) c4028sd yy ww c4028dq yy ww e3
dmc4028ssd document number: d35041 rev: 2 - 2 2 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol n-channel - q1 p-channel - q2 units drain-source voltage v dss 40 -40 v gate-source voltage (note 5) v gss ? 20 ? 20 v continuous drain current v gs = 10v (notes 7 & 9) i d 7.2 5.2 a t a = 70c (notes 7 & 9) 5.5 4.2 (notes 6 & 9) 5.4 4 (notes 6 & 10) 6.5 4.8 pulsed drain current v gs = 10v (notes 7 & 9) i dm 27.3 20.4 a continuous source current (body diode) (notes 7 & 9) i s 3.35 3.15 a pulsed source current (body diode) (notes 8 & 9) i sm 27.3 20.4 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol n-channel - q1 p-channel - q2 unit power dissipation linear derating factor (notes 6 & 9) p d 1.25 10 w mw/c (notes 6 & 10) 1.8 14.3 (notes 7 & 9) 2.16 17.2 thermal resistance, junction to ambient (notes 6 & 9) r ja 100 c/w (notes 6 & 10) 70 (notes 7 & 9) 58 thermal resistance, junction to lead (notes 9 & 11) r jl 53 53 operating and storage temperature range t j, t stg -55 to +150 c notes: 5. aec-q101 v gs maximum is ? 16v. 6. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pc b with high coverage of single sided 1oz copper, in still air c onditions; the device is measured when operating in a steady-state condition. 7. same as note (5), except the device is measured at t ? 10 sec. 8. same as note (5), except the device is pulsed with d= 0. 02 and pulse width 300 s. the pulse current is limited by the m aximum junction temperature. 9. for a dual device with one active die. 10. for a device with two active die running at equal power. 11. thermal resistance from junction to so lder-point (at the end of the drain lead).
dmc4028ssd document number: d35041 rev: 2 - 2 3 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd thermal characteristics 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 (note 3 & 6) 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area npn @ single pulse, t amb =25c dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb =25c pulse power dissipation maximum power (w) pulse width (s) (note 3 & 6) pnp @ single pulse, t amb =25c 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a)
dmc4028ssd document number: d35041 rev: 2 - 2 4 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd electrical characteris tics ? q1 n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 40 ? ? v i d = 250a, v gs = 0v zero gate voltage drain current i dss ? ? 0.5 a v ds = 40v, v gs = 0v gate-source leakage i gss ? ? ? 100 na v gs = ? 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) 1.0 ? 3.0 v i d = 250a, v ds = v gs static drain-source on-resistance (note 12) r ds (on) ? 0.018 0.028 ? v gs = 10v, i d = 6a 0.033 0.049 v gs = 4.5v, i d = 5a forward transconductance (notes 12 & 13) g fs ? 22.8 ? s v ds = 15v, i d = 6a diode forward voltage (note 12) v sd ? 0.845 1.1 v i s = 6a, v gs = 0v reverse recovery time (note 13) t rr ? 135 ? ns i s = 6a, di/dt = 100a/ ? s reverse recovery charge (note 13) q rr ? 799 ? nc dynamic characteristics (note 13) input capacitance c iss ? 604 ? pf v ds = 20v, v gs = 0v f = 1mhz output capacitance c oss ? 106 ? pf reverse transfer capacitance c rss ? 59.6 ? pf total gate charge (note 14) q g ?? 6.5 ?? nc v gs = 4.5v v ds = 20v i d = 6a total gate charge (note 14) q g ? 12.9 ? nc v gs = 10v gate-source charge (note 14) q gs ? 2.3 ? nc gate-drain charge (note 14) q gd ? 3.6 ? nc turn-on delay time (note 14) t d(on) ? 4.2 ? ns v dd = 20v, v gs = 10v i d = 6a, r g ? 6.0 ? turn-on rise time (note 14) t r ? 12.4 ? ns turn-off delay time (note 14) t d(off) ? 13.8 ? ns turn-off fall time (note 14) t f ? 10.7 ? ns notes: 12. measured under pulsed conditions. pulse width ? 300 ? s; duty cycle ? 2% 13. for design aid only, not subject to production testing. 14. switching characteristics are independent of operating junction temperatures.
dmc4028ssd document number: d35041 rev: 2 - 2 5 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd typical characteristics ? q1 n-channel 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 123 1e-3 0.01 0.1 1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 2.5v 3.5v 10v 4.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 3.5v 10v 4v 2v 2.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 12a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 4.5v v gs r ds(on) drain-source on-resistance ( ? ) i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
dmc4028ssd document number: d35041 rev: 2 - 2 6 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd typical characteristics ? q1 n-channel - (cont.) 0.1 1 10 0 200 400 600 800 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 02468101214 0 2 4 6 8 10 v ds = 20v i d = 6a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) test circuits ? q1 n-channel current regulator charge gate charge test circuit sw itching time test circuit basicgatechargewaveform sw itching time w aveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t v ds dd v r d r g v ds i d i g d(off)
dmc4028ssd document number: d35041 rev: 2 - 2 7 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd electrical characteris tics ? q2 p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -40 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current i dss ? ? -0.5 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? ? 100 na v gs = ? 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) -1.0 ? -3.0 v i d = -250 a, v ds = v gs static drain-source on-resistance (note 12) r ds(on) ? 0.039 0.050 ? v gs = -10v, i d = -6a 0.060 0.079 v gs = -4.5v, i d = -5a forward transconductance (notes 12 & 13) g fs ? 16.6 ? s v ds = -15v, i d = -6a diode forward voltage (note 13) v sd ? ? ? -0.865 -1.1 v i s = -6a, v gs = 0v reverse recovery time (note 13) t rr ? 138 ? ns i s = -6a, di/dt = 100a/s reverse recovery charge (note 13) q rr ? 841 ? nc dynamic characteristics (note 13) input capacitance c iss ? 674 ? pf v ds = -20v, v gs = 0v f = 1mhz output capacitance c oss ? 115 ? pf reverse transfer capacitance c rss ? 67.7 ? pf total gate charge (note 14) q g ? 7.0 ? nc v gs = -4.5v v ds = -20v i d = -6a total gate charge (note 14) q g ? 14 ? nc v gs = -10v gate-source charge (note 14) q gs ? 2.2 ? nc gate-drain charge (note 14) q gd ? 3.7 ? nc turn-on delay time (note 14) t d(on) ? 2.3 ? ns v dd = -20v, v gs = -10v i d = -6a, r g ? 6.0 ? turn-on rise time (note 14) t r ? 14.1 ? ns turn-off delay time (note 14) t d(off) ? 25.1 ? ns turn-off fall time (note 14) t f ? 14.3 ? ns notes: 12. measured under pulsed conditions. pulse width ? 300s; duty cycle ? 2% 13. for design aid only, not subject to production testing. 14. switching characteristics are independent of operating junction temperatures.
dmc4028ssd document number: d35041 rev: 2 - 2 8 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd typical characteristics ? q2 p-channel 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1.5 2.0 2.5 3.0 3.5 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 10v 3.5v -v gs 2.5v 4v 3v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 3.5v 3v 2v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) 4v typical transfer characteristics -v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = -12a v gs( th) v gs = v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4.5v 10v 3v 4v 3.5v 2.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance ??? -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
dmc4028ssd document number: d35041 rev: 2 - 2 9 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd typical characteristics ? q2 p-channel ? (cont.) 0.1 1 10 0 200 400 600 800 1000 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 2 4 6 8 101214 0 2 4 6 8 10 v ds = -20v i d = -6a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits ? q2 p-channel c urrent regulator charge gate charge test circuit switchin g time test circuit basic gate charge waveform switchin g time waveforms d.u.t 50k 0.2 f 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v dd r d r g pulse width 1 s duty factor 0.1% v ds i d i g
dmc4028ssd document number: d35041 rev: 2 - 2 10 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ?? 0 ? 8 ? all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
dmc4028ssd document number: d35041 rev: 2 - 2 11 of 11 www.diodes.com april 2013 ? diodes incorporated advance information a product line o f diodes incorporated dmc4028ssd important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com

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